Film forming method and the film-forming apparatus of amorphous carbon, silicon oxide mixed film

摘要

PROBLEM TO BE SOLVED: To provide a film deposition method for uniformly and quickly depositing a mixed film of amorphous carbon and silicon oxide which has both characteristics of amorphous carbon and silicon oxide.;SOLUTION: Mixed gas G0 containing raw material gas is supplied between a holding electrode 1 and an electrode body 10 having an application electrode 2 which are arranged opposite to each other, and the AC voltage is applied to the application electrode 2 while generating the DC bias voltage between the electrode body 10 and the holding electrode 1 as necessary under the atmospheric state. Thus, glow discharge plasma is generated between a film-deposited body W held by the holding electrode 1 and the electrode body 10, and an amorphous carbon-silicon oxide mixed film is deposited on the film-deposited body W. Raw material gas contains hydrocarbon gas, organic silane gas and oxygen source gas. In the raw material gas, the mixture ratio of organic silane gas to oxygen source gas is 99.9-0.1 to 0.1-99.9, and the mixture ratio of hydrocarbon gas to organic silane gas+oxygen source gas is 1:99 to 99:1.;COPYRIGHT: (C)2012,JPO&INPIT