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A study of the qualities of silicon oxide film formed and CVD silicon oxide film irradiated by high-density Kr/O{sub}2 mixed plasma at low temperature

机译:高密度Kr / O {sub} 2混合等离子体低温辐照形成氧化硅膜和CVD氧化硅膜的质量研究

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摘要

The silicon oxide film has been formed on the silicon substrate with (111) orientation by the oxygen radical generated in high-density Kr/O{sub}2 mixed plasma using newly-developed microwave-excitation plasma system. Measured by XPS, it has been confirmed that the silicon oxide film quality formed by the oxygen radical oxidation is good quality in comparison with the silicon oxide film formed by the conventional oxygen molecule oxidation. The non-doped silicon oxide film formed by CVD method (NSG film) has been irradiated the oxygen radical generated in high-density Kr/O{sub}2 mixed plasma at 400℃. It has been confirmed that the quality of NSG film irradiated oxygen radical is improved compared with the conventional NSG film annealed in high temperature. It has been cleared that the irradiation of oxygen radical generated in high-density Kr/O{sub}2 mixed plasma is improved the quality of NSG film at low temperature less than 500℃
机译:使用新开发的微波激发等离子体系统,通过在高密度Kr / O {sub} 2混合等离子体中产生的氧自由基在(111)取向的硅衬底上形成氧化硅膜。通过XPS测量,已经证实与通过常规氧分子氧化形成的氧化硅膜相比,由氧自由基氧化形成的氧化硅膜质量是良好的质量。通过CVD法形成的非掺杂氧化硅膜(NSG膜)在400℃下照射了高密度Kr / O {sub} 2混合等离子体中产生的氧自由基。已经证实,与在高温下退火的常规NSG膜相比,NSG膜辐照的氧自由基的质量得到改善。已经清楚的是,高密度Kr / O {sub} 2混合等离子体中产生的氧自由基的辐照可以改善NSG薄膜在低于500℃的低温下的质量。

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