首页> 外国专利> Chemical mechanical polishing pad and chemical mechanical polishing method using the same

Chemical mechanical polishing pad and chemical mechanical polishing method using the same

机译:化学机械抛光垫及使用该化学机械抛光垫的化学机械抛光方法

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad capable of making compatible both the improvement of the flatness of a surface to be polished and the reduction of a polishing defect (scratch) in CMP, and a chemical mechanical polishing method using the pad.;SOLUTION: The chemical mechanical polishing pad includes a polishing layer formed of a composition containing 80-99 pts.mass of thermoplastic polyurethane and 1-20 pts.mass of a polymer compound with the water absorption of 3-3,000%.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种化学机械抛光垫,该化学抛光垫能够兼顾改善被抛光表面的平整度和减少CMP中的抛光缺陷(划痕),以及使用该抛光垫的化学机械抛光方法解决方案:化学机械抛光垫包括一个抛光层,该抛光层由包含80-99 pts。质量的热塑性聚氨酯和1-20 pts。质量的高分子化合物组成,吸水率为3-3,000%。 :(C)2011,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号