Method of producing a p-type amorphous silicon thin film, the manufacturing method of a photovoltaic device and a photovoltaic device

摘要

PROBLEM TO BE SOLVED: To provide a p-type amorphous silicon thin film which enhances photoconductivity against a boron density in the thin film.;SOLUTION: The p-type amorphous silicon thin film can be formed by a catalytic CVD method. A boron density in the thin film is 7×10²⁰ to 2×10²¹ atoms/cm^-3, and the photoconductivity of the thin film is 8×10^-5 to 2×10^-3 S/cm.;COPYRIGHT: (C)2008,JPO&INPIT