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Silicon single crystal in a nitrogen concentration calculation methods and resistance shift amount calculation method
Silicon single crystal in a nitrogen concentration calculation methods and resistance shift amount calculation method
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机译:硅单晶中氮浓度的计算方法和电阻位移量的计算方法
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摘要
A method for calculating a nitrogen concentration in a silicon single crystal doped with nitrogen, wherein the correlation among a carrier concentration difference [n] obtained from a difference between resistivity after heat treatment by which an oxygen donor is eliminated and resistivity after heat treatment by which a nitrogen-oxygen donor is eliminated, an oxygen concentration [Oi], and a nitrogen concentration [N] in the nitrogen-doped silicon single crystal is obtained in advance, and an unknown nitrogen concentration [N] in a nitrogen-doped silicon single crystal is obtained by calculation from the carrier concentration difference [n] and the oxygen concentration [Oi] based on the correlation. As a result, a method for calculating a nitrogen concentration in a silicon single crystal, the method that can obtain the value of a nitrogen concentration even when an oxygen concentration is different, and a method for calculating the shift amount of resistivity are provided.
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