首页>
外国专利>
METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRYSTAL AND METHOD FOR CALCULATING RESISTIVITY SHIFT AMOUNT
METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRYSTAL AND METHOD FOR CALCULATING RESISTIVITY SHIFT AMOUNT
展开▼
机译:硅单晶中氮浓度的计算方法和电阻率漂移量的计算方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for calculating a nitrogen concentration in a silicon single crystal doped with nitrogen, wherein the correlation among a carrier concentration difference Δ[n] obtained from a difference between resistivity after heat treatment by which an oxygen donor is eliminated and resistivity after heat treatment by which a nitrogen-oxygen donor is eliminated, an oxygen concentration [Oi], and a nitrogen concentration [N] in the nitrogen-doped silicon single crystal is obtained in advance, and an unknown nitrogen concentration [N] in a nitrogen-doped silicon single crystal is obtained by calculation from the carrier concentration difference Δ[n] and the oxygen concentration [Oi] based on the correlation. As a result, a method for calculating a nitrogen concentration in a silicon single crystal, the method that can obtain the value of a nitrogen concentration even when an oxygen concentration is different, and a method for calculating the shift amount of resistivity are provided.
展开▼