METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRYSTAL AND METHOD FOR CALCULATING RESISTANCE SHIFT AMOUNT

摘要

PROBLEM TO BE SOLVED: To provide a method for calculating nitrogen concentration in a silicon single crystal for calculating a value of the nitrogen concentration even for a case that the nitrogen concentration is different, and a method for calculating a shift amount of resistance.SOLUTION: In a method for calculating nitrogen concentration in a silicon single crystal obtained by doping nitrogen, correlation between carrier concentration difference [n] to be found from difference between resistivity after heat treatment for eliminating an oxygen donor and resistivity after heat treatment for eliminating a nitrogen oxide donor, oxygen concentration [Oi], and the nitrogen concentration [N] in the nitrogen doped silicon single crystal is preliminarily found, and unknown nitrogen concentration [N] in the nitrogen doped silicon single crystal is calculated and found from the carrier concentration difference [n] and the oxygen concentration [Oi] on the basis of the correlation.