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SENSING MEMORY CELLS COUPLED TO DIFFERENT ACCESS LINES IN DIFFERENT BLOCKS OF MEMORY CELLS
SENSING MEMORY CELLS COUPLED TO DIFFERENT ACCESS LINES IN DIFFERENT BLOCKS OF MEMORY CELLS
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机译:在不同的记忆细胞块中耦合到不同访问线的传感记忆细胞
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摘要
In an embodiment, a target memory cell in a first block of memory cells of a memory device and a target memory cell in a second block of memory cells of the memory device are sensed concurrently while a read voltage is applied to a selected access line coupled to the target memory cell in the first block of memory cells and while a read voltage is applied to another selected access line coupled to the target memory cell in the second block of memory cells.
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