Vertical Tunneling Field-Effect Transistor Cell with Coaxially Arranged Gate Contacts and Drain Contacts

摘要

A tunneling field-effect transistor (TFET) device includes a source region, a gate stack, and a drain region. The TFET device further includes a source contact on the source region, a plurality of gate contacts on a planar portion of the gate stack, and a plurality of drain contacts on the drain region. The gate contacts are aligned on a first plurality of lines that intersect at a common point on the source region from a top view. The drain contacts are aligned on a second plurality of lines that intersect at the common point from the top view.