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Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts
Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts
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机译:具有同轴布置的栅极触点和漏极触点的垂直隧穿场效应晶体管单元
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摘要
A tunneling field-effect transistor (TFET) device includes a source region, a gate stack, and a drain region. The TFET device further includes a source contact on the source region, a plurality of gate contacts on a planar portion of the gate stack, and a plurality of drain contacts on the drain region. The gate contacts are aligned on a first plurality of lines that intersect at a common point on the source region from a top view. The drain contacts are aligned on a second plurality of lines that intersect at the common point from the top view.
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