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METHOD AND STRUCTURE OF THREE DIMENSIONAL CMOS TRANSISTORS WITH HYBRID CRYSTAL ORIENTATIONS
METHOD AND STRUCTURE OF THREE DIMENSIONAL CMOS TRANSISTORS WITH HYBRID CRYSTAL ORIENTATIONS
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机译:混合晶体取向的三维CMOS晶体管的方法和结构
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摘要
A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.
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