Power Semiconductor Device with Reduced On-Resistance and Increased Breakdown Voltage

摘要

In one implementation, a power semiconductor device includes an active region and a termination region. A depletion trench finger extends from the active region and ends in the termination region. An arched depletion trench surrounds the depletion trench finger in the termination region, the arched depletion trench enables one or both of an increased breakdown voltage and a reduced on-resistance in the power semiconductor device.