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INTEGRATED CIRCUITS INCLUDING EPITAXIALLY GROWN STRAIN-INDUCING FILLS DOPED WITH BORON FOR IMPROVED ROBUSTNESS FROM DELIMINATION AND METHODS FOR FABRICATING THE SAME
INTEGRATED CIRCUITS INCLUDING EPITAXIALLY GROWN STRAIN-INDUCING FILLS DOPED WITH BORON FOR IMPROVED ROBUSTNESS FROM DELIMINATION AND METHODS FOR FABRICATING THE SAME
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机译:集成电路,其中包括掺有硼的表观生长应变诱导填充物,以改善干燥性,并实现了相同的制造方法
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摘要
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure. An EPI strain-inducing fill is deposited into the cavity. The EPI strain-inducing fill includes a main SiGe layer and a Si cap that overlies the main SiGe layer. The EPI strain-inducing fill is doped with boron and has a first peak boron content in an upper portion of the EPI strain-inducing fill of about 2.5 times or greater than an average boron content in an intermediate portion of the main SiGe layer.
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