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Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy
Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy
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机译:使用晶格调谐的畴匹配外延生长化合物半导体的外延生长
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摘要
A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a transition layer on the upper surface of the substrate. The transition layer has a lattice spacing that varies between its lower and upper surfaces. The lattice spacing at the lower surface matches the lattice spacing of the substrate to within a first lattice mismatch of 7%. The lattice spacing at the upper surface matches the lattice spacing of the final film to within a second lattice mismatch of 7%. The method also includes forming the final film on the upper surface of the transition layer.
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