首页> 外国专利> THREE DIMENSIONAL BRANCHLINE COUPLER USING THROUGH SILICON VIAS AND DESIGN STRUCTURES

THREE DIMENSIONAL BRANCHLINE COUPLER USING THROUGH SILICON VIAS AND DESIGN STRUCTURES

机译:利用硅晶界和设计结构的三维支线耦合器

摘要

A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure.
机译:公开了一种使用硅通孔(TSV)的三维(3D)分支线耦合器,其制造方法和设计结构。该方法包括在第一介电材料中形成第一波导结构。该方法还包括在第二介电材料中形成第二波导结构。该方法还包括形成穿过在第一介电材料和第二介电材料之间形成的衬底的硅通孔,该衬底将第一波导结构连接到第二波导结构。

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