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Transistors having features which preclude straight-line lateral conductive paths from a channel region to a source/drain region
Transistors having features which preclude straight-line lateral conductive paths from a channel region to a source/drain region
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机译:晶体管具有排除从沟道区域到源极/漏极区域的直线横向导电路径的特征
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摘要
Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.
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