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TRANSISTORS HAVING FEATURES WHICH PRECLUDE STRAIGHT-LINE LATERAL CONDUCTIVE PATHS FROM A CHANNEL REQION TO A SOURCE/DRAIN REQION
TRANSISTORS HAVING FEATURES WHICH PRECLUDE STRAIGHT-LINE LATERAL CONDUCTIVE PATHS FROM A CHANNEL REQION TO A SOURCE/DRAIN REQION
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机译:具有从通道区域到源/漏极区域的直线横向传导路径的特征的晶体管
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摘要
Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.
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