Power device and a reverse conducting power IGBT

摘要

A semiconductor device is provided which includes a semiconductor body having a base region and a main horizontal surface, and a first electrode arranged on the main horizontal surface. The semiconductor body further includes a plurality of vertical trenches having gate electrodes in a vertical cross-section. A body region forms a first pn-junction with the base region and extends between two of the vertical trenches. A source region is in ohmic contact with the first electrode and arranged between the two vertical trenches. An anti-latch-up region is arranged between the two vertical trenches and in ohmic contact with the first electrode. The anti-latch-up region has a maximum doping concentration which is higher than a maximum doping concentration of the body region. An anode region forms a rectifying pn-junction with the base region only and adjoins a third one of the vertical trenches, and has ohmic contact with the first electrode.