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首页> 外文期刊>Power Electronics, IET >Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user-friendly) power devices
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Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user-friendly) power devices

机译:IGBT和二极管的多方向开发:低损耗,坚固但轻巧(用户友好)的功率器件

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摘要

From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.
机译:从降低功率损耗和安全操作的角度来看,功率器件的发展方向仅仅是单向的。但是,从应用的角度来看,方向是广泛的。需要考虑多种要求,例如开关波形,操作环境,不仅包括温度范围,还包括湿度,宇宙射线耐久度,封装紧凑性等的组合。在这项研究中,几种努力被解释为最新技术。

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