Pre-patterned hard mask for ultrafast lithographic imaging

摘要

A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm² or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm² and forming elements.