首页>
外国专利>
Epitaxially growing GaN layers on silicon (100) wafers
Epitaxially growing GaN layers on silicon (100) wafers
展开▼
机译:在硅(100)晶圆上外延生长GaN层
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods and structures for GaN on silicon-containing substrates are disclosed, comprising a texturing process to generate a rough surface containing (111) surface, which then can act as an underlayer for epitaxial GaN. LED devices are then fabricated on the GaN layer. Variations of the present invention include different orientations of silicon layer instead of (100), such as (110) or others; and other semiconductor materials instead of GaN, such as other semiconductor materials suitable for LED devices.
展开▼