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Wide bandgap device having a buffer layer disposed over a diamond substrate
Wide bandgap device having a buffer layer disposed over a diamond substrate
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机译:宽带隙器件,其缓冲层设置在金刚石基板上
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摘要
A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.
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