High power ultraviolet light emitting diode with superlattice

摘要

An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises Al_xIn_yGa_1-x-yN wherein 0x≦1, 0≦y≦1 and 0x+y≦1. A first conductive layer with a first type of conductivity is formed on the super-lattice wherein the first conductive layer comprises Al_xIn_yGa_1-x-yN wherein 0x≦1, 0≦y≦1 and 0x+y≦1. A quantum well region is formed on the first conductive layer wherein the quantum well region comprises Al_xIn_yGa_1-x-yN wherein 0x≦1, 0≦y≦1 and 0x+y≦1. A second conductive layer is formed on the quantum well with a second type of conductivity wherein the second conductive layer comprises Al_xIn_yGa_1-x-yN wherein 0x≦1, 0≦y≦1 and 0x+y≦1. A first metal contact is formed in electrical contact with the first conductive layer and a second metal contact is formed in electrical contact with the second conductive layer.