The presently claimed invention provides a barium strontium titanate/strontium titanate/gallium arsenide (BST/STO/GaAs) heterostructure comprising a gallium arsenide (GaAs) substrate, at least one strontium titanate (STO) layer, and at least one barium strontium titanate (BST) layer. The BST/STO/GaAs heterostructure of the present invention has a good temperature stability, high dielectric constant and low dielectric loss, which enable to fabricate tunable ferroelectric devices. A method for fabricating the BST/STO/GaAs heterostructure is also disclosed in the present invention, which comprises formation of at least one STO layer on the GaAs substrate by a first laser molecular beam epitaxial system, and formation of at least one BST layer on the STO layer by a second laser molecular beam epitaxial system.
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机译：本发明提供一种钛酸锶钡/钛酸锶/砷化镓（BST / STO / GaAs）异质结构，其包括砷化镓（GaAs）衬底，至少一层钛酸锶（STO）层和至少一层钛酸锶锶（ BST）层。本发明的BST / STO / GaAs异质结构具有良好的温度稳定性，高介电常数和低介电损耗，这使得能够制造可调谐铁电器件。在本发明中还公开了一种制造BST / STO / GaAs异质结构的方法，该方法包括通过第一激光分子束外延系统在GaAs衬底上形成至少一个STO层，以及在其上形成至少一个BST层。通过第二激光分子束外延系统形成STO层。
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