首页> 外国专利> Electrical connecting element having nano-twinned copper, method of fabricating the same, and electrical connecting structure comprising the same

Electrical connecting element having nano-twinned copper, method of fabricating the same, and electrical connecting structure comprising the same

机译:具有纳米孪晶铜的电连接元件,其制造方法以及包括该电连接元件的电连接结构

摘要

An electrical connecting element, a method of fabricating the same, and an electrical connecting structure comprising the same are disclosed. The method of fabricating the electrical connecting structure having twinned copper of the present invention comprises steps of: (A) providing a first substrate; (B) forming a nano-twinned copper layer on part of a surface of the first substrate; (C) forming a solder on the nano-twinned copper layer of the first substrate; and (D) reflowing the nano-twinned Cu layer and solder to produce a solder joint, wherein at least part of the solder reacts with the nano-twinned copper layer to produce an intermetallic compound (IMC) layer which comprises a Cu3Sn layer, This invention reduces the voids formation in the interface between the intermetallic compound and the solder, and then enhances the reliability of solder joints.
机译:公开了一种电连接元件,其制造方法以及包括该电连接元件的电连接结构。本发明的具有孪晶铜的电连接结构的制造方法包括以下步骤:(A)提供第一基板; (B)在第一基板的一部分表面上形成纳米孪晶铜层。 (C)在第一基板的纳米孪晶铜层上形成焊料; (D)回流纳米孪晶铜层和焊料以产生焊点,其中至少一部分焊料与纳米孪晶铜层反应以产生包含Cu 的金属间化合物(IMC)层3 Sn层,本发明减少了金属间化合物与焊料之间的界面中形成的空隙,从而提高了焊接接头的可靠性。

著录项

  • 公开/公告号US8957323B2

    专利类型

  • 公开/公告日2015-02-17

    原文格式PDF

  • 申请/专利权人 NATIONAL CHIAO TUNG UNIVERSITY;

    申请/专利号US201313973900

  • 发明设计人 CHIH CHEN;WEI-LAN CHIU;

    申请日2013-08-22

  • 分类号H05K3/02;H05K1/11;H05K1/09;H05K3/40;

  • 国家 US

  • 入库时间 2022-08-21 15:20:01

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