Scatterometry metrology methods and methods of modeling formation of a vertical region of a multilayer semiconductor substrate to comprise a scatterometry target

摘要

A scatterometry target formed relative to an elevationally outermost surface of a substrate includes features having an optical property that is different from that of spaces between the features. The substrate has spaced-apart parallel elongated blocking lines having an optical property different from that of spaces between the blocking lines. The blocking lines are elevationally inward of the target features. The target features and the blocking lines overlap within a same vertical region of the substrate. Polarized electromagnetic radiation having multiple wavelengths is impinged onto the scatterometry target. Pitch of the blocking lines is less than the smallest wavelength of the impinged radiation. The blocking lines reduce spectrum variation to below a detectable level for any polarized electromagnetic radiation passing to elevationally inward of the blocking lines. Electromagnetic radiation that is reflected from the scatterometry target from the impinging is detected, and therefrom a property associated with the target features and/or spaces between the target features is determined.