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STRUCTURE MODEL DESCRIPTION AND USE FOR SCATTEROMETRY-BASED SEMICONDUCTOR MANUFACTURING PROCESS METROLOGY
STRUCTURE MODEL DESCRIPTION AND USE FOR SCATTEROMETRY-BASED SEMICONDUCTOR MANUFACTURING PROCESS METROLOGY
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机译:基于比重法的半导体制造过程计量学的结构模型描述与应用
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摘要
A method includes accessing a structure model defining a cross-sectional profile of a structure on a sample. The cross-sectional profile is at least partially defined using a set of blocks. Each of the blocks includes a number of vertices. One or more of the vertices are expressed using one or more algebraic relationships between a number of parameters corresponding to the structure. Information is evaluated from the structure model to produce expected metrology data for a scatterometry-based optical metrology. The expected metrology data is suitable for use for determining one or more of the number of parameters corresponding to the structure. Apparatus are also disclosed.
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