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Methods for fabricating FinFET integrated circuits using laser interference lithography techniques
Methods for fabricating FinFET integrated circuits using laser interference lithography techniques
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机译:使用激光干涉光刻技术制造FinFET集成电路的方法
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摘要
A method for fabricating an integrated circuit includes providing a semiconductor substrate with a pad layer overlying the semiconductor substrate and a photoresist layer overlying the pad layer, exposing the photoresist layer to a split laser beam to form a plurality of parallel linear void regions in the photoresist layer, and etching the pad layer and the semiconductor substrate beneath the plurality of parallel linear void regions to form a plurality of extended parallel linear void regions. The method further includes depositing a first dielectric material over the semiconductor substrate, patterning a photoresist material over the semiconductor substrate to cover a portion of the semiconductor substrate, and etching portions of the pad layer, the first dielectric material, and the semiconductor substrate. Still further, the method includes depositing a second dielectric material into the second void regions.
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