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Method of forming spacers that provide enhanced protection for gate electrode structures
Method of forming spacers that provide enhanced protection for gate electrode structures
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机译:形成对栅电极结构提供增强保护的隔离物的方法
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摘要
Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate and forming a plurality of spacers proximate the gate electrode structures, wherein the plurality of spacers comprises a first silicon nitride spacer positioned adjacent a sidewall of the gate electrode structure, a generally L-shaped silicon nitride spacer positioned adjacent the first silicon nitride spacer, and a silicon dioxide spacer positioned adjacent the generally L-shaped silicon nitride spacer.
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