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High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer
High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer
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机译:通过去除覆盖层而无需牺牲间隔物形成的高K金属栅电极结构
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摘要
In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers.
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