Silicidation blocking process using optically sensitive HSQ resist and organic planarizing layer

摘要

A silicidation blocking process is provided. In one aspect, a silicidation method is provided. The method includes the following steps. A wafer is provided having a semiconductor layer over an oxide layer. An organic planarizing layer (OPL)-blocking structure is formed on one or more regions of the semiconductor layer which will block the one or more regions of the semiconductor layer from silicidation. At least one silicide metal is deposited on the wafer. The wafer is annealed to react the at least one silicide metal with one or more exposed regions of the semiconductor layer. Unreacted silicide metal is removed. Any remaining portions of the OPL-blocking structure are removed.