Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells

摘要

A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n⁻-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p⁺-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n⁻-type semiconductor layer. The anode electrode forms a Schottky junction with the n⁻-type semiconductor layer and forms an ohmic junction with the p⁺-type contact layer.