Regulation of a load current-to-sensing current ratio in a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET)

摘要

This disclosure describes techniques for regulating a k_ILIS factor (i.e., a load current-to-sensing current ratio) of a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET). The techniques may include generating a reference voltage based on a configurable function that defines the reference voltage as a function of two or more main terminal voltages which are obtained at two or more different locations on a metallization that forms a main terminal of a current sensing power MOSFET, and regulating a sensing terminal of the current sensing power MOSFET at a voltage that is determined based on the reference voltage. Using a configurable function of two or more main terminal voltages to regulate a sensing terminal of a current sensing power MOSFET may allow the voltage at which the sensing terminal is regulated to be trimmed in order to improve the accuracy of the k_ILIS factor produced by the current sensing power MOSFET.