首页> 外国专利> Method and apparatus for detecting a row or a column of a memory to repair without reporting all corresponding defective memory cells

Method and apparatus for detecting a row or a column of a memory to repair without reporting all corresponding defective memory cells

机译:用于检测存储器的行或列以进行修复而不报告所有相应的有缺陷的存储单元的方法和设备

摘要

A system including first and second devices. The first device generates a trigger signal to test a memory. The memory has memory cells including first and second cells. The first and second cells are defective and are in a same row or column. The second device: tests the memory in response to the trigger signal and based on a first frequency; generates an error signal in response to detecting the first cell as defective; and based on the test, generates information including first and second addresses of the first and second cells. The first device, based on the error signal, receives the information at a second frequency. The second device compares the first and second addresses, and if a match, continues the test without reporting the second cell as defective. The first device, based on a number of times the first address is matched, repairs the row or the column.
机译:包括第一设备和第二设备的系统。第一设备产生触发信号以测试存储器。该存储器具有包括第一和第二单元的存储单元。第一单元和第二单元有缺陷,并且在同一行或同一列中。第二设备:响应于触发信号并基于第一频率测试存储器;响应于将第一单元检测为缺陷而产生错误信号;并且基于测试,生成包括第一和第二单元的第一和第二地址的信息。第一设备基于误差信号以第二频率接收信息。第二个设备比较第一个和第二个地址,如果匹配,则继续测试而不将第二个单元报告为有缺陷。第一设备基于匹配第一地址的次数来修复行或列。

著录项

  • 公开/公告号US9047252B1

    专利类型

  • 公开/公告日2015-06-02

    原文格式PDF

  • 申请/专利权人 MARVELL INTERNATIONAL LTD.;

    申请/专利号US201414311402

  • 发明设计人 WINSTON LEE;ALBERT WU;CHORNG-LII LIOU;

    申请日2014-06-23

  • 分类号G06F11/20;G11C29/12;G11C29/14;G11C29/48;G11C29/56;G11C29/44;G11C29/00;

  • 国家 US

  • 入库时间 2022-08-21 15:18:18

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