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Method and apparatus for detecting a row or a column of a memory to repair without reporting all corresponding defective memory cells
Method and apparatus for detecting a row or a column of a memory to repair without reporting all corresponding defective memory cells
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机译:用于检测存储器的行或列以进行修复而不报告所有相应的有缺陷的存储单元的方法和设备
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摘要
A system including first and second devices. The first device generates a trigger signal to test a memory. The memory has memory cells including first and second cells. The first and second cells are defective and are in a same row or column. The second device: tests the memory in response to the trigger signal and based on a first frequency; generates an error signal in response to detecting the first cell as defective; and based on the test, generates information including first and second addresses of the first and second cells. The first device, based on the error signal, receives the information at a second frequency. The second device compares the first and second addresses, and if a match, continues the test without reporting the second cell as defective. The first device, based on a number of times the first address is matched, repairs the row or the column.
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