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Solder bump joining structure with low resistance joining member
Solder bump joining structure with low resistance joining member
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机译:具有低电阻接合构件的焊料凸块接合结构
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摘要
A semiconductor device is provided with a wiring substrate including a connection pad, a joining member joined with the connection pad, and a semiconductor chip including a connection terminal electrically connected to the connection pad via the joining member. The joining member consists of a first intermetallic compound layer formed at a boundary between the connection pad and the joining member, a second intermetallic compound layer formed at a boundary between the connection terminal and the joining member, a third intermetallic compound layer composed of an intermetallic compound of Cu6Sn5 or (Cu,Ni)6Sn5 and formed between the first intermetallic compound layer and the second intermetallic compound layer, and discrete metal grains, each being composed of a simple substance of Bi, in the third intermetallic compound layer. Surfaces of each of the metal grains are completely covered by the third intermetallic compound layer so that the metal grains do not form a layer.
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机译:半导体装置具备:布线基板,该布线基板包括连接焊盘;与该连接焊盘接合的接合部件;以及半导体芯片,其包括经由该接合部件与该连接焊盘电连接的连接端子。接合构件由在连接焊盘与接合构件之间的边界处形成的第一金属间化合物层,在连接端子与接合构件之间的边界处形成的第二金属间化合物层,由金属间化合物构成的第三金属间化合物层组成。 Cu 6 Sub> Sn 5 Sub>或(Cu,Ni) 6 Sub> Sn 5 Sub>的化合物并在第一金属间化合物之间形成在第三金属间化合物层中,金属层和第二金属间化合物层以及离散的金属晶粒均由Bi的单质组成。每个金属颗粒的表面完全被第三金属间化合物层覆盖,使得金属颗粒不形成层。
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