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Method of doping a polycrystalline transistor channel for vertical NAND devices
Method of doping a polycrystalline transistor channel for vertical NAND devices
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机译:掺杂用于垂直NAND器件的多晶晶体管沟道的方法
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摘要
A method of doping the polycrystalline channel in a vertical FLASH device is disclosed. This method uses a plurality of high energy ion implants to dope the channel at various depths of the channel. In some embodiments, these ion implants are performed at an angle offset from the normal direction, such that the implanted ions pass through at least a portion of the surrounding ONO stack. By passing through the ONO stack, the distribution of ranges reached by each ion may differ from that created by a vertical implant.
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