Methods for n-type doping of graphene, and n-type-doped graphene compositions

摘要

The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5×10¹³ cm⁻², have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications.