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Fin-shaped field effect transistor (finFET) structures having multiple threshold voltages (Vt) and method of forming
Fin-shaped field effect transistor (finFET) structures having multiple threshold voltages (Vt) and method of forming
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机译:具有多个阈值电压(Vt)的鳍形场效应晶体管(finFET)结构及其形成方法
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摘要
Various embodiments include fin-shaped field effect transistor (finFET) structures that enhance work function and threshold voltage (Vt) control, along with methods of forming such structures. The finFET structures can include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). In some embodiments, the PFET has fins separated by a first distance and the NFET has fins separated by a second distance, where the first distance and the second distance are distinct from one another. In some embodiments, the PFET or the NFET include fins that are separated from one another by non-uniform distances. In some embodiments, the PFET or the NFET include adjacent fins that are separated by distinct distances at their source and drain regions.
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