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Semiconductor structures including tight pitch contacts

机译:半导体结构,包括紧密间距的触点

摘要

Methods of fabricating semiconductor structures incorporating tight pitch contacts aligned with active area features and of simultaneously fabricating self-aligned tight pitch contacts and conductive lines using various techniques for defining patterns having sublithographic dimensions. Semiconductor structures having tight pitch contacts aligned with active area features and, optionally, aligned conductive lines are also disclosed, as are semiconductor structures with tight pitch contact holes and aligned trenches for conductive lines.
机译:使用各种技术来定义具有亚光刻尺寸的图案的制造结合有与有源区域特征对准的紧密间距触点的半导体结构的方法,以及同时制造自对准紧密间距触点和导线的方法。还公开了具有与有源区域特征对准的紧密节距触点的半导体结构,以及可选地,对准的导线,以及具有紧密节距接触孔和对准的导线沟槽的半导体结构。

著录项

  • 公开/公告号US8994189B2

    专利类型

  • 公开/公告日2015-03-31

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201414275414

  • 发明设计人 LUAN C. TRAN;

    申请日2014-05-12

  • 分类号H01L23/48;H01L21/02;H01L21/033;H01L21/311;H01L21/314;H01L21/316;H01L21/768;

  • 国家 US

  • 入库时间 2022-08-21 15:17:49

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