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Driving stage for phase change non-volatile memory devices provided with auto-calibration feature
Driving stage for phase change non-volatile memory devices provided with auto-calibration feature
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机译:具有自动校准功能的相变非易失性存储设备的驱动级
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摘要
A driving stage for a phase change non-volatile memory device may include an output driving unit, which supplies an output driving current during programming of a memory cell, a driving-control unit, which receives an input current and generates a first control signal for controlling supply of the output driving current in such a way that a value thereof has a desired relation with the input current, and a level-shifter element, which carries out a level shift of a voltage of the first control signal for supplying to the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal. A calibration unit may carry out an operation of updating of the value of a shift voltage across the level-shifter element, as the value of the input current varies.
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