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Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
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机译:光电二极管具有p-n结,由于施加可变电压,其空间电荷区的扩展范围不同
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摘要
A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.
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