首页>
外国专利>
Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line
Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line
展开▼
机译:用单个场线写入多个磁性随机存取存储单元的设备,系统和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.
展开▼