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APPARATUS, SYSTEM, AND METHOD FOR WRITING MULTIPLE MAGNETIC RANDOM ACCESS MEMORY CELLS WITH A SINGLE FIELD LINE
APPARATUS, SYSTEM, AND METHOD FOR WRITING MULTIPLE MAGNETIC RANDOM ACCESS MEMORY CELLS WITH A SINGLE FIELD LINE
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机译:用于编写具有单个磁场线的多个磁性随机访问存储单元的设备,系统和方法
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摘要
A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.
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