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Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids
Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids
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机译:在衬底上具有导电层的半导体器件,该导电层具有通气孔以引导凸点材料并减少互连空隙
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摘要
A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.
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