Self assembled semiconductor micro/nano structures on gaas substrate for monolithic integration of optoelectronic devices

摘要

The present invention relates to the fabrication of semiconductor micro/nanostructures by using strain-driven self assembling technique. The semiconductor Micro/ Nano structures have monolithic integration for micro electro mechanical system (MEMS) and optoelectronics devices. This will lead to the monolithic integration of the devices for future optical communication system on GaAs substrates.