首页> 外国专利> THREE-DIMENSIONAL MICRO-STRUCTURE, ARRANGEMENT WITH AT LEAST TWO THREE-DIMENSIONAL MICRO-STRUCTURES, METHOD FOR PRODUCING THE MICRO-STRUCTURE AND USE OF THE MICRO-STRUCTURE

THREE-DIMENSIONAL MICRO-STRUCTURE, ARRANGEMENT WITH AT LEAST TWO THREE-DIMENSIONAL MICRO-STRUCTURES, METHOD FOR PRODUCING THE MICRO-STRUCTURE AND USE OF THE MICRO-STRUCTURE

机译:三维微结构,至少具有二维微结构的排列,微结构的生产方法和使用

摘要

The invention relates to a three-dimensional micro-structure comprising a plurality of adjacent micro-columns which are arranged at a distance from each other and essentially parallel in relation to the respective longitudinal extension, said micro¬columns being made of at least one micro-column material having respectively an aspect ratio in the region of 20 -1000 and respectively a micro-column diameter in the region of 0,1 µm - 200 µm, and a micro-column intermediate chamber arranged between adjacent micro-columns having a micro-column distance selected from between the adjacent micro-columns in the region of 1 µm -100 µm. The invention also relates to a method for producing the three-dimensional micro-structures according to the following steps: a) a template is provided with template material, said template having a three-dimensional structure with column-like template cavities essentially inverse for the micro-structure, b) the micro-column material is arranged in the column-like cavities such that the micro-columns are formed, and c) the template material is at least partially removed. A silicon wafer is preferably used as the template. In order to provide the template, the PAECE (Photo Assisted Electro-Chemical Etching) method is used. Said invention enables micro-structures with extremely large surfaces to be produced.
机译:本发明涉及一种三维微结构,其包括多个相邻的微柱,所述多个微柱彼此间隔一定距离并且相对于各自的纵向延伸基本平行,所述微柱由至少一个微柱制成。柱材料,其长径比分别在20 -1000范围内,微柱直径分别在0.1 µm-200 µm范围内,以及在相邻的具有微孔的微柱之间布置的微柱中间腔-从相邻的微柱之间选择的1μm-100μm范围内的-柱距。本发明还涉及根据以下步骤生产三维微结构的方法:a)模板提供有模板材料,所述模板具有三维结构,该圆柱结构的柱状模板腔基本上与所述腔相反。微观结构,b)将微柱材料布置在圆柱状空腔中,以形成微柱,并且c)至少部分除去模板材料。硅晶片优选用作模板。为了提供模板,使用了PAECE(光辅助电化学蚀刻)方法。所述发明使得能够制造具有非常大的表面的微结构。

著录项

  • 公开/公告号IN2240DEN2012A

    专利类型

  • 公开/公告日2015-08-21

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIEGESELLSCHAFT;

    申请/专利号IN2012DELNP2240

  • 发明设计人 ZAPF JORG;HEDLER HARRY;

    申请日2012-03-14

  • 分类号B81C99/00;

  • 国家 IN

  • 入库时间 2022-08-21 15:14:27

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