Procedure for obtaining intercept point third-order integrated into a semiconductor crystal linear analog circuits by measuring temperature

摘要

Procedure for obtaining intercept point third-order integrated in a semiconductor crystal by measuring temperature linear analog circuits. # The present invention describes a method for measuring the linearity integrated in a semiconductor crystal linear analog circuits, to by obtaining the point of third order intercept by measuring temperature. Fig. 1 shows a digital semiconductor crystal (1) which may contain different analog circuits and / or (2, 3, 4, 5), one of which is a linear analog circuit, in this case an amplifier (2). Operation of said amplifier causes power dissipation and this increased surface temperature of the semiconductor crystal. With proper sequence of stimuli, measurements of certain frequency components of said temperature conducted near the amplifier circuit (7), allow to obtain the point of third order intercept amplifier, which is a parameter used to quantify the linearity in systems such as receivers, amplifiers or mixers. The temperature measurement can be done either by temperature sensors integrated on the same semiconductor crystal or by external sensors.