STRUCTURE FOR GROWING HIGH-TEMPERATURE EPILAYER ON HETEROGENEOUS SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

A method for manufacturing a heterogeneous substrate according to the present invention comprises the steps of: growing an inter-layer on top of a base substrate; forming a top layer on top of the inter-layer; growing a buffer layer having a low temperature on top of the top layer; forming a III-nitride epilayer having a high temperature on top of the buffer layer; and forming an inter-mixing layer between the base substrate and the inter-layer by a portion of the inter-layer coming into contact with the base substrate reacting with the base substrate, when the inter-layer acquires flexibility when growing the epilayer. According to the present invention, the inter-layer acquires flexibility when temperature is increased to grow the epilayer at a high temperature, and this portion is inter-mixed with the base substrate, thereby providing a high-quality characteristic of the epilayer that is ultimately grown so as to not be influenced by a lattice constant of a semiconductor base substrate, which is advantageous for a large area.