Reflective X-ray microscope and inspection system for examining objects with wavelengths 100nm

摘要

the invention relates to an inspection system for the investigation of objects, in particular for the mikrolithographie masks with wavelengths of & 100 nm, preferably & 30 nm, witha lighting system for illuminating a field in an object layer (1);in the object level within the field to be studied while the object is arranged.an imaging system for wavelengths less than or equal to 100 nm for magnifying at least a cutaway of the object graph in an image plane (3).- one in the image plane (3) arranged bildaufnahmesystem.