首页> 外国专利> DEPOSITION PROCESS BASED ON STENCIL MASK AND APPLICATION TO THE FABRICATION OF TAGS SUPPORTING MULTI-FUNCTIONAL TRACEABLE CODES

DEPOSITION PROCESS BASED ON STENCIL MASK AND APPLICATION TO THE FABRICATION OF TAGS SUPPORTING MULTI-FUNCTIONAL TRACEABLE CODES

机译:基于模板的沉积过程及其在支持多功能可追踪代码的标签制作中的应用

摘要

A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature. The process further comprises adjusting a temperature of the substrate surface greater or equal to the chemical precursor molecule decomposition temperature, thereby remaining greater than a mask temperature, and maintaining the mask temperature below the decomposition temperature, thereby causing a decomposition of the chemical precursor and a growth of a film on the substrate surface, but not on the mask; and heating the substrate surface using a heating device.
机译:化学气相沉积工艺包括以下步骤:提供高真空腔室,并在高真空腔室内部:定位衬底表面;以及将衬底表面定位在衬底上。将掩模平行于基板表面定位,从而该掩模包括一个或多个开口;调整基板表面和掩模之间的确定尺寸的间隙;使至少一种前体物质的多个化学前体束通过视线传播朝向掩模,多个化学前体束中的每一个均从独立的点光源发射,并且化学前体的分子穿过一个或多个更多的掩模开口撞击在衬底表面上以在其上沉积。化学前体分子的至少一部分在分解温度下在基板表面上分解。该方法进一步包括将衬底表面的温度调节为大于或等于化学前体分子的分解温度,从而保持大于掩模温度,并且将掩模温度保持在分解温度以下,从而引起化学前体和有机物的分解。在基材表面而不是在掩模上生长薄膜;使用加热装置加热基板表面。

著录项

  • 公开/公告号WO2015140731A1

    专利类型

  • 公开/公告日2015-09-24

    原文格式PDF

  • 申请/专利权人 3D-OXIDES;

    申请/专利号WO2015IB51983

  • 申请日2015-03-18

  • 分类号B65C9;G09F3;C23C16/04;C23C16/40;C23C16/46;C23C16/52;B42D25/29;

  • 国家 WO

  • 入库时间 2022-08-21 15:04:10

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